Charged EVs | SiC vs GaN semiconductors for EV power converters: Tech Opinion - Charged EVs
Next-Gen GaN-on-SiC Power Devices from New Epi Growth Mechanism - News
High Thermal Boundary Conductance across Bonded Heterogeneous GaN–SiC Interfaces,ACS Applied Materials & Interfaces - X-MOL
How SiC and GaN technology is affecting passive component development
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
What makes SiC and GaN suitable for high-power designs - Planet Analog
第2回：GaNの商用化が加速、SiCはやや足踏み (3/4) | 連載02 省エネを創り出すパワー半導体 | Telescope Magazine
a) Cross sectional schematic drawing of the GaN-on-SiC samples. (b)... | Download Scientific Diagram
Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices - ScienceDirect
Compound Semiconductors : What Are “SiC” and “GaN”? ｜Sanken Electric
.png "The Essential Steps for High Performance GaN on SiC RF Devices")
The Essential Steps for High Performance GaN on SiC RF Devices
SiC/GaN Poised for Power - Electronics-Lab.com
SiCおよびGaN半導体 | DigiKey
Compound Semiconductors : What Are “SiC” and “GaN”? ｜Sanken Electric
Market analysis: "Who really requires GaN & SiC power devices ?"
GaNとSiCによるハイブリッド型トランジスタの動作実証に産総研が成功 | TECH+（テックプラス）
Power GaN and SiC: Entering a New Era - EE Times Asia
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
低コストで高性能な高周波トランジスタを製造できるGaN積層構造を開発――5Gの普及に貢献 エア・ウォーター - fabcross for エンジニア
産総研：GaNとSiCを一体化したハイブリッド型トランジスタを世界で初めて動作実証
ハイブリッド型トランジスタ、GaNとSiCを一体化：産総研が作製、動作実証にも成功 - EE Times Japan
來自愛沃特的GaN on SiC/Si基板提案：材料世界網
GaN on SiCが拡大する高周波デバイス市場、 残る課題はGaN on GaNで解決する可能性 | 日経クロステック（xTECH）
